Interfacial microstructures of Au/Zn/Au/Ti/Au ohmic contact to p-type InP.
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High-transparency Ni/Au ohmic contact to p-type GaN
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
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ژورنال
عنوان ژورنال: BUNSEKI KAGAKU
سال: 1991
ISSN: 0525-1931
DOI: 10.2116/bunsekikagaku.40.11_741